A Method for Selection of Power MOSFETs to Minimize Power Dissipation

A balance between static and dynamic losses of a power MOSFET is always desirable for accomplishing the maximum efficiency specific converter. The standard semiconductor theory suggests that minimum dissipation in can be achieved by selecting device active area. However, circuit designers, area unknown given only datasheet parameters are available. Hence, this paper, we propose simple method, based on theory, to select optimum from family MOSFETs using parameters. By applying optimization method supply under development, engineers best transistors yield lowest systems development.